4N60 Mosfet

120.00

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The 4N60 MOSFET is a high-voltage power transistor designed for efficient switching applications. With a drain-source voltage of 600V and a continuous drain current of 4A, it offers low on-resistance and fast switching speed, making it ideal for power supplies, converters, and other electronic circuits.

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Description

The 4N60 MOSFET is a powerful N-channel enhancement-mode transistor, designed to handle high-voltage and high-current applications. Featuring a 600V drain-source voltage (Vds) and a continuous drain current of 4A, it excels in switching applications with minimal power loss. Its low on-resistance and fast switching characteristics make it suitable for use in power converters, SMPS (Switched Mode Power Supplies), and other industrial and consumer electronics. The robust design ensures high performance and reliability in demanding environments, while its compact package allows for easy integration into various circuits.

Key Features

  1. High Voltage Handling: Supports up to 600V drain-source voltage, ideal for high-power applications.
  2. Continuous Drain Current: Rated for a continuous drain current of 4A, ensuring efficient power handling.
  3. Low On-Resistance: Delivers low Rds(on) for reduced conduction losses and improved efficiency.
  4. Fast Switching Speed: Enables rapid on-off transitions, making it perfect for high-speed switching circuits.
  5. Enhanced Thermal Performance: Built to handle higher temperatures, ensuring stability and durability in various operating conditions.

Precautions

  1. Proper Heat Dissipation: Ensure adequate cooling and heatsinking to prevent thermal damage during operation.
  2. Gate Protection: Use a gate resistor and Zener diode to protect the gate from voltage spikes that could exceed its maximum rating.
  3. Correct Polarity: Verify correct polarity connections to avoid damaging the MOSFET due to reverse voltage.
  4. Static Electricity Precaution: Handle with care and use anti-static measures to avoid damage from electrostatic discharge (ESD).
  5. Current Limits: Do not exceed the maximum rated current of 4A to avoid overheating or failure of the MOSFET.

Frequently Asked Questions (FAQs)

Question: What is the maximum voltage that the 4N60 MOSFET can handle?
Answer: The 4N60 MOSFET can handle a maximum drain-source voltage of 600V, making it suitable for high-voltage applications.

Question: Can the 4N60 MOSFET be used in switching power supplies?
Answer: Yes, the 4N60 MOSFET is commonly used in switching power supplies (SMPS) due to its fast switching speed and low on-resistance.

Question: How should the 4N60 MOSFET be protected from static electricity?
Answer: The 4N60 MOSFET should be handled with anti-static precautions, including using grounding wrist straps and anti-static mats to prevent electrostatic discharge (ESD) damage.

Question: What are the typical applications of the 4N60 MOSFET?
Answer: The 4N60 MOSFET is typically used in power converters, motor controllers, switching power supplies, and other high-power electronic circuits.

Question: What is the maximum continuous current the 4N60 MOSFET can carry?
Answer: The maximum continuous drain current for the 4N60 MOSFET is 4A. Exceeding this current may lead to overheating or component failure.

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