IRF9540N P-Channel Mosfet

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The IRF9540N is a P-Channel MOSFET that offers high-speed switching with low Rds(on), ideal for power management applications. It supports up to -100V drain-source voltage and -19A drain current, making it suitable for efficient switching in automotive, industrial, and consumer electronics circuits.

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Description

The IRF9540N is a P-Channel MOSFET designed for high-efficiency power switching applications. With a drain-source voltage of -100V and a drain current of -19A, it excels in power management tasks, including motor control, DC-DC converters, and load switching. Its low Rds(on) of 0.117Ω ensures minimal power loss, while the high-speed switching capability makes it suitable for applications requiring fast response times. Built using advanced silicon technology, the IRF9540N offers reliability and robustness for automotive, industrial, and consumer electronics, making it a popular choice in circuits where efficient power handling is crucial.

Key Features

  1. High Voltage Capability: Supports a maximum drain-source voltage of -100V, ideal for high-voltage applications.
  2. High Current Handling: Rated for up to -19A drain current, enabling usage in demanding power circuits.
  3. Low Rds(on): Ensures low power loss with a maximum Rds(on) of 0.117Ω, improving efficiency.
  4. Fast Switching: High-speed switching performance, suitable for applications requiring rapid response times.
  5. Thermal Stability: Designed with excellent thermal performance for reliable operation under varying conditions.

Precautions

  1. Proper Heat Dissipation: Ensure adequate heat sinking to prevent thermal damage due to power dissipation during operation.
  2. Avoid Exceeding Voltage/Current Limits: Do not exceed the rated drain-source voltage (-100V) and drain current (-19A) to prevent device failure.
  3. Gate-Source Voltage Handling: Handle the gate-source voltage carefully, ensuring it stays within safe limits to avoid MOSFET damage.
  4. Proper ESD Protection: Implement electrostatic discharge (ESD) protection to prevent damage to the MOSFET during handling and installation.
  5. Correct Polarity Connection: Ensure correct polarity when connecting the MOSFET in the circuit to avoid improper operation or damage.

Frequently Asked Questions (FAQs)

Question: What is the maximum drain-source voltage of the IRF9540N?
Answer: The maximum drain-source voltage of the IRF9540N is -100V.

Question: What is the maximum drain current that the IRF9540N can handle?
Answer: The IRF9540N can handle a maximum drain current of -19A.

Question: What applications is the IRF9540N suitable for?
Answer: The IRF9540N is suitable for power management applications such as motor control, DC-DC converters, and load switching in automotive, industrial, and consumer electronics.

Question: How does the low Rds(on) of the IRF9540N improve performance?
Answer: The low Rds(on) minimizes power loss, increasing efficiency in power management circuits by reducing conduction losses.

Question: Does the IRF9540N require heat sinking?
Answer: Yes, adequate heat sinking is recommended to ensure proper thermal management and prevent overheating during operation.

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